Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• chemical etching (MACE), the wafer pieces were placed in a beaker containing an etchant solution made up of 5 mL of 4.6 M HF and 5 mL of 0.02 M AgNO3. The etching timings were 0, 5, 10, 20, 40, and 80 min. After the etching process, to remove the as-generated Ag dendrites, the substrates were immediately

• in this work. The wafer was divided into 1 × 1 cm2 pieces, which were then cleaned with an ultrasonic cleaner in acetone (20 min), ethanol (15 min), and deionized water (10 min). The wafer pieces were oxidized in hot Piranha solution (45 mL of H2SO4/15 mL of H2O2) for 5 min. To perform metal-assisted

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• thermoelectric material is the development of techniques for the low-cost fabrication and interconnection of a large number of nanostructures to generate a significant amount of power. Metal-assisted chemical etching (MACE) [11][12][13][14] of silicon is very promising because it gives the opportunity to

• on one-pot metal-assisted chemical etching (MACE) [22] (Figure 1). Silicon chips of roughly 1 × 1 cm2 have been cut from n-doped (phosphorous) commercial silicon ⟨100⟩ wafers with a nominal resistivity of 10 Ω·cm (nominal doping concentration 1015 cm−3). The chips, mounted on a custom-made apparatus

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• Abstract The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires. Noble metal

• with a reflectance below 0.3%. The demonstrated technology can be integrated into common fabrication processes for microelectromechanical systems. Keywords: black silicon; bottom-up; metal-assisted chemical etching (MACE); nanowires; wafer-level integration; Introduction Silicon nanostructures

• fabrication uses cost-efficient subprocesses and omits expensive processes such as nanopatterning with high-resolution lithography. One low-cost method for the fabrication of such high aspect ratio templates and structures is metal-assisted chemical etching (MACE). This process uses a noble metal catalyst

Nanoarchitectonics: bottom-up creation of functional materials and systems

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2020, 11, 450–452, doi:10.3762/bjnano.11.36

• that were formed by metal-assisted chemical etching (MACE) [27], and the formation of high-tolerance crystalline hydrogels from cyclic dipeptides upon self-assembly [28]. In addition, a review on the use of DNA as the fundamental material building block for molecular and structural engineering [29

The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

• Stefania Carapezzi and
• Anna Cavallini

Beilstein J. Nanotechnol. 2019, 10, 2094–2102, doi:10.3762/bjnano.10.204

• design through suited statistical analysis tools. Results: We have investigated the self-assembly bundling process of nanowires fabricated by metal-assisted chemical etching (MACE). First, we have applied theoretical models in order to obtain a quantitative estimation of the driving forces leading to

• conditions and the capacity dimension of the nanowires was obtained. Keywords: atomic force microscopy (AFM); capillary force; metal-assisted chemical etching (MACE); multifractal analysis; nanoarchitectonics; nanowires; self-assembly; Introduction In the last years, huge progress was made regarding the

• in the industry. The top-down methods involve the use of both dry [9][10] and wet etching [11] to carve nanostructures from a substrate. Metal-assisted chemical etching (MACE) [12][13][14][15] has gained particular attention in this regard, because it is simple, of low cost and versatile. MACE is an

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• nanowires with a length of several tens of micrometers, is the silicon metal assisted chemical etching (MaCE) [114][115][116]. The thermal conductivity of crystalline nanowires, obtained by MaCE, has been measured by Hochbaum and co-workers [9]. In the MaCE technique, a patterned film (or nanoparticles) of